| Technology: | Si | |
| Mounting Style: | Through Hole, SPW35N60C3 | |
| Package/Case: | TO-247-3 | |
| Number of Channels: | 1 Channel | |
| Transistor Polarity: | N-Channel | |
| Vds - Drain-Source Breakdown Voltage: | 600 V | |
| Id - Continuous Drain Current: | 34.6 A | |
| Rds On - Drain-Source Resistance: | 81 mOhms | |
| Vgs - Gate-Source Voltage: | 20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V | |
| Qg - Gate Charge: | 200 nC | |
| Minimum Operating Temperature: | - 55 C | |
| Maximum Operating Temperature: | + 150 C | |
| Packaging: | Tube | |
| Channel Mode: | Enhancement | |
| Tradename: | CoolMOS | |
| Brand: | Infineon Technologies | |
| Configuration: | 1 N-Channel |
| Contact Member | |
| category | Business |
| Price | 129.00 |
| Availability | In Stock |
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